a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv ceo i c = 50 ma 18 v bv ces i c = 15 ma 36 v bv ebo i e = 5.0 ma 4.0 v i cbo v cb = 28 v 5.0 ma h fe v ce = 5.0 v i c = 250 ma 20 --- --- c ob v cb = 12.5 v f = 1.0 mhz 110 pf p g h h c v ce = 12.5 v p out = 25 w f = 175 mhz 10 60 db % npn silicon rf power transistor vhb25 - 12s description: the asi vhb25 - 12s is designed for features: omnigold ? metalization system maximum ratings i c 4.0 a v cbo 36 v v ceo 18 v v ebo 4.0 v p diss 65 w @ t c = 25 o c t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 3.5 o c/w package style .380 4l stud order code: asi10715 minimum inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 b c d e f g a maximum .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm h .090 / 2.29 .100 / 2.54 dim .220 / 5.59 .230 / 5.84 .490 / 12.45 .450 / 11.43 i j .155 / 3.94 .175 / 4.45 .750 / 19.05 .980 / 24.89 .100 / 2.54 e f d ?c b .112x45 g h j i a #8-32 unc-2a
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